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https://opaj.napstic.cn/periodicalArticle/downloadReview/0120120604664392
氧氩比对磁控溅射ZnO薄膜结构及光致发光性能的影响OACSTPCD
Effects of O_2/Ar Ratios on the Structure and Photoluminescence of ZnO Thin Films Prepared by Magnetron Sputtering
采用射频反应磁控溅射法以不同的氧氩比在玻璃衬底上制备了ZnO薄膜,并对薄膜进行了退火处理;利用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的物相组成和表面形貌进行了分析,利用荧光分光光度计对ZnO薄膜的室温光致发光（PL）谱进行了测试。结果表明：当氧氩气体积比为7∶5时,所制备的ZnO薄膜晶粒细小均匀,薄膜结晶质量最好;ZnO薄膜具有紫光、蓝光和绿光三个发光峰,随着氧氩比的增加,蓝光的发射强度增强,而紫光和绿光的发射强度先增强后减弱,当氧氩气体积比为7∶5时紫光和绿光的发射强度最强。
ZnO thin films were deposited on glass substrates by the reactive radio-frequency magnetron sputtering with different O2/Ar ratios.The phase compositions and morphology of the ZnO thin films were analyzed by XRD and AFM.The room-temperature photoluminescence（PL） of ZnO films were measured by fluorescence photometer.The results show that when the O2/Ar ratio was 7∶5,the prepared ZnO thin film had the best crystallization quality with fine and homogeneous grain structure.The violet,blue and green peaks were observed on the PL spectra.With the increase of O2/Ar ratio,the blue emission was enhanced,while the violet and green emission was increased first and then decrease,and when the O2/Ar ratio was 7∶5,the violet and green emission intensity was the strongest.
刘丹;李合琴;刘涛;武大伟
合肥工业大学材料科学与工程学院,合肥230009合肥工业大学材料科学与工程学院,合肥230009合肥工业大学材料科学与工程学院,合肥230009合肥工业大学材料科学与工程学院,合肥230009
ZnO薄膜射频反应磁控溅射光致发光
ZnO thin filmreactive radio-frequency magnetron sputteringphotoluminescence
《理化检验：物理分册》 2011 (12)
763-766,4
国家“973”计划资助项目（2008CB717802）安徽省自然科学基金资助项目（090414182,11040606M63）安徽省高校自然科学基金资助项目（KJ2009A091）
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